Growth of Silicon Nanowires via Vapor-Liquid-Solid Mechanism and Its Structural Characteristics Si纳米线的气-液-固生长与结构表征
With the effect of redox reaction, vapor-liquid-solid ( VLS) growth mechanism was proposed to understand the growth process. 通过表征分析结果,我们提出了氧化还原反应作用下的VLS生长机制,较好的解释了ZnS纳米线的形成过程。
A self-catalytic vapor-liquid-solid mechanism is proposed for interpreting the growth of co-doped oxide ISGO nanowires. 还提出了用自催化气-液-固(VLS)生长机制来解释双掺杂氧化物ISGO纳米线的生长;
The vapor-liquid-solid growth mechanism of self-catalyzed InP nanowires was proved. 3. 验证了自催化InP纳米线的气-液-固生长机理。
The ZnO nanostructures grow anisotropic self-catalysis via vapor-solid ( VS) mechanism, while the ZnS NWs grow via vapor-liquid-solid ( VLS) growth mechanism. 氧化锌纳米材料遵循自催化及各向异性的固-气生长机理,硫化锌纳米线则按气-液-固生长机理。
The growth process of AIN nanowires is analyzed qualitatively based on crystal growth theory, the earlier stage of the growth is through vapor-liquid-solid mechanism and the later stage is by the growing of screw dislocation. 利用晶体生长理论对AlN纳米线的生长机理进行了定性分析,AlN纳米线生长的前期为气液固生长机理,后期为螺旋位错生长机理。